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| HAL : emse-00436105, version 1 |
| Fiche détaillée |  Récupérer au format |
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| Journal of Radioanalytical Chemistry 55, 2 (1980) 427-443 |
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| Amorphous semiconductor thin films characterization by nuclear microanalysis |
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| J. P. Thomas 1M. Fallavier 1 |
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| Institut de Physique Nucléaire (et IN2P3), Université Lyon-1 43, Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex (France) Collaboration(s) |
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| (1980) |
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| A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(1SN, ~7) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed. |
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| 1 : | Institut de Physique Nucléaire de Lyon (IPNL) |
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CNRS : UMR5822 – IN2P3 – Université Claude Bernard - Lyon I |
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| 2 : | Laboratoire des Procédés en Milieux Granulaires (LPMG-EMSE) |
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CNRS : UMR5148 – École Nationale Supérieure des Mines - Saint-Étienne |
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| 3 : | Centre Sciences des Processus Industriels et Naturels (SPIN-ENSMSE) |
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École Nationale Supérieure des Mines - Saint-Étienne |
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| 4 : | Département Microsystèmes, Instrumentation et Capteurs Chimiques (MICC-ENSMSE) |
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École Nationale Supérieure des Mines - Saint-Étienne – SPIN |
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| domaine | : | Sciences de l'ingénieur/Génie des procédés |
| emse-00436105, version 1 | |
| http://hal-emse.ccsd.cnrs.fr/emse-00436105 | |
| oai:hal-emse.ccsd.cnrs.fr:emse-00436105 | |
| Contributeur : Andrée-Aimée Toucas | |
| Soumis le : Jeudi 26 Novembre 2009, 10:28:55 | |
| Dernière modification le : Jeudi 26 Novembre 2009, 10:28:55 | |
