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Journal of Radioanalytical Chemistry 55, 2 (1980) 427-443
Amorphous semiconductor thin films characterization by nuclear microanalysis
Jean-Paul Thomas 1, Mireille Fallavier 1, Jean-Marie Mackowski 1, 2, Christophe Pijolat 1, Jean Tousset 1, Muryel Wehr 1
Institut de Physique Nucléaire de Lyon ; Institut National de Physique Nucléaire et de Physique des Particules Collaboration(s)
(1980)

A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.
1 :  Institut de Physique Nucléaire de Lyon (IPNL)
CNRS : UMR5822 – IN2P3 – Université Claude Bernard - Lyon I
2 :  Laboratoire des matériaux avancés (LMA)
CNRS : USR3264 – IN2P3 – Université Claude Bernard - Lyon I
Sciences de l'ingénieur/Génie des procédés
Amorphous semiconductor thin films – nuclear microanalysis – diffusion – metal electrodes – chalcogenide films.