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Journal Articles Materials Letters Year : 2009

Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

Abstract

A simple method is proposed in order to correct experimental secondary ion mass spectrometry (SIMS) profiles. This method uses only one parameter which is experimentally accessible. It is tested in the case of As SIMS profiles in Si(001) acquired with three different primary ion beam energies: 1, 3, and 9 keV. This method is shown to give consistent corrections. The correction of SIMS profiles measured in a same sample with different analysis conditions leads to the same As distribution.

Domains

Electronics

Dates and versions

emse-00429559 , version 1 (03-11-2009)

Identifiers

Cite

Alain Portavoce, Nicolas Rodriguez, Rachid Daineche, C. Grosjean, Christophe Girardeaux. Correction of secondary ion mass spectrometry profiles for atom diffusion measurements. Materials Letters, 2009, 63 (8), pp.676-678. ⟨10.1016/j.matlet.2008.12.018⟩. ⟨emse-00429559⟩
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