Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

Abstract : A simple method is proposed in order to correct experimental secondary ion mass spectrometry (SIMS) profiles. This method uses only one parameter which is experimentally accessible. It is tested in the case of As SIMS profiles in Si(001) acquired with three different primary ion beam energies: 1, 3, and 9 keV. This method is shown to give consistent corrections. The correction of SIMS profiles measured in a same sample with different analysis conditions leads to the same As distribution.
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Article dans une revue
Materials Letters, Elsevier, 2009, 63 (8), pp.676-678. 〈10.1016/j.matlet.2008.12.018〉
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https://hal-emse.ccsd.cnrs.fr/emse-00429559
Contributeur : Sabine Salmeron <>
Soumis le : mardi 3 novembre 2009 - 14:34:03
Dernière modification le : mardi 23 octobre 2018 - 14:36:04

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Alain Portavoce, Nicolas Rodriguez, R. Daineche, C. Grosjean, C. Girardeaux. Correction of secondary ion mass spectrometry profiles for atom diffusion measurements. Materials Letters, Elsevier, 2009, 63 (8), pp.676-678. 〈10.1016/j.matlet.2008.12.018〉. 〈emse-00429559〉

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