Low pressure chemical vapor deposition of tin oxide thin films from an organometallic compound. Application to gas detection.

Abstract : Tin dioxide SnO2 is one of the most common materials used in the fabrication of semiconductor gas sensors The principle of such sensors is based upon the variations of conductivity induced by adsorption of various gases. A low pressure OMCVD apparatus has been developed in order to obtain tin dioxide thin films. Structural and electrical properties have been investigated by different techniques: S.E.M., X-ray diffraction and conductivity measurements in different atmospheres. A correlation is found between the deposition parameters and the electrical properties of CVD-SnO2 thin films.
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Article dans une revue
Journal de Physique IV Colloque, 1991, 1 (C2), pp.303-310
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https://hal-emse.ccsd.cnrs.fr/emse-00435856
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Soumis le : mercredi 25 novembre 2009 - 09:47:14
Dernière modification le : mercredi 29 novembre 2017 - 10:07:20

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  • HAL Id : emse-00435856, version 1

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Christophe Pijolat, Laurent Bruno, René Lalauze. Low pressure chemical vapor deposition of tin oxide thin films from an organometallic compound. Application to gas detection.. Journal de Physique IV Colloque, 1991, 1 (C2), pp.303-310. 〈emse-00435856〉

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