Amorphous semiconductor thin films characterization by nuclear microanalysis

Abstract : A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.
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Article dans une revue
Journal of Radioanalytical Chemistry, Springer-Verlag, 1980, 55 (2), pp.427-443
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https://hal-emse.ccsd.cnrs.fr/emse-00436105
Contributeur : Andrée-Aimée Toucas <>
Soumis le : jeudi 26 novembre 2009 - 10:28:55
Dernière modification le : lundi 5 août 2013 - 16:45:33

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  • HAL Id : emse-00436105, version 1

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Jean-Paul Thomas, Mireille Fallavier, Jean-Marie Mackowski, Christophe Pijolat, Jean Tousset, et al.. Amorphous semiconductor thin films characterization by nuclear microanalysis. Journal of Radioanalytical Chemistry, Springer-Verlag, 1980, 55 (2), pp.427-443. 〈emse-00436105〉

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