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Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods

Abstract : We present a series of organic thin film transistor (OTFT) devices realized by vacuum evaporation, spincoating, drop casting and inkjet printing and a comparative analysis of their electrical response/behavior obtained under identical measurement conditions. A small molecule, α,ω-hexyl-distyryl-bithiophene DHDS2T, was used as a hole transporting active layer. Structure and morphology of thin films have been studied by atomic force microscopy, X-ray diffraction and optical microscopy. Different parameters linked directly to the processes (solvent, concentration, deposition method, surface, post-treatment...) are identified as key factors controlling film quality/crystallinity and device performances. This systematic study reveals the factors that limit efficient charge transport at the macroscopic scale of the channel length in OTFT devices.
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https://hal-emse.ccsd.cnrs.fr/emse-00491467
Contributor : Sébastien Sanaur <>
Submitted on : Friday, June 11, 2010 - 5:04:20 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:32 PM

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Y. Didane, C. Martini, Mickaël Barret, Sébastien Sanaur, Philippe Collot, et al.. Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods. Thin Solid Films, Elsevier, 2010, 518 (18), pp.5311-5320. ⟨10.1016/j.tsf.2010.03.079⟩. ⟨emse-00491467⟩

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