Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods

Abstract : We present a series of organic thin film transistor (OTFT) devices realized by vacuum evaporation, spincoating, drop casting and inkjet printing and a comparative analysis of their electrical response/behavior obtained under identical measurement conditions. A small molecule, α,ω-hexyl-distyryl-bithiophene DHDS2T, was used as a hole transporting active layer. Structure and morphology of thin films have been studied by atomic force microscopy, X-ray diffraction and optical microscopy. Different parameters linked directly to the processes (solvent, concentration, deposition method, surface, post-treatment...) are identified as key factors controlling film quality/crystallinity and device performances. This systematic study reveals the factors that limit efficient charge transport at the macroscopic scale of the channel length in OTFT devices.
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Thin Solid Films, Elsevier, 2010, 518 (18), pp.5311-5320. 〈10.1016/j.tsf.2010.03.079〉
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https://hal-emse.ccsd.cnrs.fr/emse-00491467
Contributeur : Sébastien Sanaur <>
Soumis le : vendredi 11 juin 2010 - 17:04:20
Dernière modification le : jeudi 26 avril 2018 - 12:40:02

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Y. Didane, C. Martini, Mickaël Barret, Sébastien Sanaur, Philippe Collot, et al.. Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods. Thin Solid Films, Elsevier, 2010, 518 (18), pp.5311-5320. 〈10.1016/j.tsf.2010.03.079〉. 〈emse-00491467〉

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