Record 4 of 7 Record from Web of Science® Self-heating study of bulk acoustic wave resonators under high RF power

Abstract : The present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RIP power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 mu m/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified.
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Article dans une revue
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2008, 55 (1), pp.139-147. 〈10.1109/TUFFC.2008.623〉
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https://hal-emse.ccsd.cnrs.fr/emse-00502058
Contributeur : Anna Fraczkiewicz <>
Soumis le : mardi 13 juillet 2010 - 10:29:17
Dernière modification le : mercredi 14 février 2018 - 14:07:09

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Brice Ivira, René-Yves Fillit, Fabien Ndagijimana, Philippe Benech, Guy Parat, et al.. Record 4 of 7 Record from Web of Science® Self-heating study of bulk acoustic wave resonators under high RF power. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2008, 55 (1), pp.139-147. 〈10.1109/TUFFC.2008.623〉. 〈emse-00502058〉

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