Oxide HDP-CVD Modeling for Shallow Trench Isolation - Mines Saint-Étienne Access content directly
Journal Articles IEEE Transactions on Semiconductor Manufacturing Year : 2010

Oxide HDP-CVD Modeling for Shallow Trench Isolation

Abstract

A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run to run system in order to reduce the lot-to-lot variability. A model is developped to control the MeqnThickness and the range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.

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emse-00547086 , version 1 (15-12-2010)

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Agnès Roussy, Laura Delachet, Djaffar Belharet, Jacques Pinaton, Philippe Collot. Oxide HDP-CVD Modeling for Shallow Trench Isolation. IEEE Transactions on Semiconductor Manufacturing, 2010, 23 (3), pp.400-410. ⟨10.1109/TSM.2010.2051749⟩. ⟨emse-00547086⟩
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