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Oxide HDP-CVD Modeling for Shallow Trench Isolation

Abstract : A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run to run system in order to reduce the lot-to-lot variability. A model is developped to control the MeqnThickness and the range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.
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Contributor : Agnès Roussy Connect in order to contact the contributor
Submitted on : Wednesday, December 15, 2010 - 3:39:46 PM
Last modification on : Wednesday, June 24, 2020 - 4:19:22 PM



Agnès Roussy, Laura Delachet, Djaffar Belharet, Jacques Pinaton, Philippe Collot. Oxide HDP-CVD Modeling for Shallow Trench Isolation. IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2010, 23 (3), pp.400-410. ⟨10.1109/TSM.2010.2051749⟩. ⟨emse-00547086⟩



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