Oxide HDP-CVD Modeling for Shallow Trench Isolation
Résumé
A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run to run system in order to reduce the lot-to-lot variability. A model is developped to control the MeqnThickness and the range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.