Oxide HDP-CVD Modeling for Shallow Trench Isolation

Abstract : A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run to run system in order to reduce the lot-to-lot variability. A model is developped to control the MeqnThickness and the range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.
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IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2010, 23 (3), pp.400-410. 〈10.1109/TSM.2010.2051749〉
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https://hal-emse.ccsd.cnrs.fr/emse-00547086
Contributeur : Agnès Roussy <>
Soumis le : mercredi 15 décembre 2010 - 15:39:46
Dernière modification le : mercredi 29 novembre 2017 - 15:14:33

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Agnès Roussy, Laura Delachet, Djaffar Belharet, Jacques Pinaton, Philippe Collot. Oxide HDP-CVD Modeling for Shallow Trench Isolation. IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2010, 23 (3), pp.400-410. 〈10.1109/TSM.2010.2051749〉. 〈emse-00547086〉

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