Amorphous and microcrystalline silicon are currently used for electronic devices such as solar cells and thin-film transistors. This paper shows that silicon nanoparticle dispersion has the potential to be used as source material for polycrystalline silicon thin-film thus opening a route to solution processed silicon devices. After deposition, a classical thermal or microwave annealing step is used to induce the coalescence of the silicon nanoparticles. Both sintering techniques are studied in terms of morphology, electrical and optical properties.