Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS - Mines Saint-Étienne Access content directly
Journal Articles Microelectronics Reliability Year : 2014

Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Abstract

Bulk Built-In Current Sensors (bbicss) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one bbics architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor nmos transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cmos to offset it. Further, we introduce a new bbics architecture well suited for triple-well that offers high detection sensitivity and low area overhead.
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Dates and versions

emse-01094805 , version 1 (13-12-2014)

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Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, et al.. Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS. Microelectronics Reliability, 2014, 54 (9-10), pp.2289-2294. ⟨10.1016/j.microrel.2014.07.151⟩. ⟨emse-01094805⟩
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