E. Neto, I. Ribeiro, M. Vieira, G. Wirth, and F. Kastensmidt, Using bulk built-in current sensors to detect soft errors, Micro, IEEE, vol.26, issue.5, pp.10-18, 2006.

Z. Zhang, T. Wang, L. Chen, and J. Yang, A new Bulk Built-In Current Sensing circuit for single-event transient detection, CCECE 2010, pp.1-4, 2010.
DOI : 10.1109/CCECE.2010.5575124

Z. Zhang, Y. Ren, L. Chen, N. Gaspard, A. Witulski et al., A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients, Journal of Electronic Testing, vol.26, issue.6, pp.249-253, 2013.
DOI : 10.1007/s10836-013-5364-1

E. Neto, F. Kastensmidt, and G. Wirth, Tbulk-BICS: A Built-In Current Sensor Robust to Process and Temperature Variations for Soft Error Detection, IEEE Transactions on Nuclear Science, vol.55, issue.4, pp.2281-2288, 2008.
DOI : 10.1109/TNS.2008.920426

A. Simionovski and G. Wirth, Simulation Evaluation of an Implemented Set of Complementary Bulk Built-In Current Sensors With Dynamic Storage Cell, IEEE Transactions on Device and Materials Reliability, vol.14, issue.1, pp.255-261, 2013.
DOI : 10.1109/TDMR.2013.2252176

J. Dutertre, R. Possamai-bastos, O. Potin, M. Flottes, B. Rouzeyre et al., Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection, Microelectronics Reliability, vol.53, issue.9-11, pp.1320-1324, 2013.
DOI : 10.1016/j.microrel.2013.07.069
URL : https://hal.archives-ouvertes.fr/emse-01100723

G. Hubert and L. Artola, Single-event transient modeling in a 65-nm bulk cmos technology based on multi-physical approach and electrical simulations, Nuclear Science, IEEE Transactions on, vol.60, issue.6, pp.4421-4429, 2013.