D. Boneh, R. A. Demillo, and R. J. Lipton, On the Importance of Checking Cryptographic Protocols for Faults, Advances in Cryptology -EUROCRYPT '97, International Conference on the Theory and Application of Cryptographic Techniques, pp.37-51, 1997.
DOI : 10.1007/3-540-69053-0_4

A. Barenghi, L. Breveglieri, I. Koren, and D. Naccache, Fault Injection Attacks on Cryptographic Devices: Theory, Practice, and Countermeasures, Proceedings of the IEEE, pp.3056-3076, 2012.
DOI : 10.1109/JPROC.2012.2188769

URL : https://hal.archives-ouvertes.fr/hal-01110932

S. P. Skorobogatov and R. J. Anderson, Optical Fault Induction Attacks, 4th International Workshop on Cryptographic Hardware and Embedded Systems, CHES '02, pp.2-12, 2002.
DOI : 10.1007/3-540-36400-5_2

URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=

M. Agoyan, J. Dutertre, A. Mirbaha, D. Naccache, A. Ribotta et al., How to flip a bit?, 2010 IEEE 16th International On-Line Testing Symposium, pp.235-239, 2010.
DOI : 10.1109/IOLTS.2010.5560194

URL : https://hal.archives-ouvertes.fr/emse-01130826

D. Habing, The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits, IEEE Transactions on Nuclear Science, vol.12, issue.5, pp.91-100, 1965.
DOI : 10.1109/TNS.1965.4323904

S. Buchner, F. Miller, V. Pouget, and D. Mcmorrow, Pulsed-Laser Testing for Single-Event Effects Investigations, IEEE Transactions on Nuclear Science, vol.60, issue.3, pp.1852-1875, 2013.
DOI : 10.1109/TNS.2013.2255312

A. Douin, V. Pouget, F. Darracq, D. Lewis, P. Fouillat et al., Influence of Laser Pulse Duration in Single Event Upset Testing, IEEE Transactions on Nuclear Science, vol.53, issue.4, pp.1799-1805, 2006.
DOI : 10.1109/TNS.2006.880939

URL : https://hal.archives-ouvertes.fr/hal-00397942

P. Dodd and F. Sexton, Critical charge concepts for CMOS SRAMs, IEEE Transactions on Nuclear Science, vol.42, issue.6, pp.1764-1771, 1995.
DOI : 10.1109/23.488777

A. Sarafianos, C. Roscian, J. Dutertre, M. Lisart, and A. Tria, Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell, Microelectronics Reliability, vol.53, issue.9-11, pp.1300-1305, 2013.
DOI : 10.1016/j.microrel.2013.07.125

URL : https://hal.archives-ouvertes.fr/emse-01100724

A. Sarafianos, O. Gagliano, V. Serradeil, M. Lisart, J. Dutertre et al., Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology, 2013 IEEE International Reliability Physics Symposium (IRPS), pp.5-5, 2013.
DOI : 10.1109/IRPS.2013.6532028

URL : https://hal.archives-ouvertes.fr/emse-01130636

C. Roscian, A. Sarafianos, J. Dutertre, and A. Tria, Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells, 2013 Workshop on Fault Diagnosis and Tolerance in Cryptography, pp.89-98, 2013.
DOI : 10.1109/FDTC.2013.17

URL : https://hal.archives-ouvertes.fr/emse-01109133

C. Fenouillet-beranger, Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology, 2009 IEEE International Electron Devices Meeting (IEDM), pp.1-4, 2009.
DOI : 10.1109/IEDM.2009.5424251

C. Fenouillet-beranger, Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), pp.165-168, 2012.
DOI : 10.1109/ULIS.2012.6193383

URL : https://hal.archives-ouvertes.fr/hal-01002051

D. Golanski, First demonstration of a full 28nm high-k/metal gate circuit transfer from bulk to utbb fdsoi technology through hybrid integration, VLSI Technology (VLSIT), 2013 Symposium on, pp.124-125, 2013.

V. Ferlet-cavrois, Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices, IEEE Transactions on Nuclear Science, vol.52, issue.6, pp.2104-2113, 2005.
DOI : 10.1109/TNS.2005.860682

M. Alles, R. Schrimpf, R. Reed, L. Massengill, R. Weller et al., Radiation hardness of FDSOI and FinFET technologies, IEEE 2011 International SOI Conference, pp.1-2, 2011.
DOI : 10.1109/SOI.2011.6081714

A. Sarafianos, M. Lisart, O. Gagliano, V. Serradeil, C. Roscian et al., Robustness improvement of an SRAM cell against laser-induced fault injection, 2013 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS), pp.149-154, 2013.
DOI : 10.1109/DFT.2013.6653598

URL : https://hal.archives-ouvertes.fr/emse-01109141