Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell

Abstract : This abstract presents an electrical model of an SRAM cell exposed to a pulsed Photoelectrical Laser Stimulation (PLS), based on our past model of MOS transistor under laser illumination. The validity of our model is assessed by the very good correlation obtained between measurements and electrical simulation. These simulations are capable to explain some specific points. For example, in theory, a SRAM cell under PLS have four sensitive areas. But in measurements only three areas were revealed. A hypothesis was presented in this paper and confirm by electrical simulation. The specific topology of the cell masks one sensitive area. Therefore the electrical model could be used as a tool of characterization of a CMOS circuits under PLS.
Complete list of metadatas

Cited literature [5 references]  Display  Hide  Download

https://hal-emse.ccsd.cnrs.fr/emse-01100724
Contributor : Jean-Max Dutertre <>
Submitted on : Tuesday, January 6, 2015 - 9:04:15 PM
Last modification on : Thursday, February 7, 2019 - 5:04:14 PM
Long-term archiving on : Wednesday, June 3, 2015 - 5:35:55 PM

File

HAL_MR_2013_Electrical_modelin...
Files produced by the author(s)

Identifiers

Collections

Citation

A. Sarafianos, C. Roscian, Jean-Max Dutertre, M. Lisart, A. Tria. Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell. Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1300 - 1305. ⟨10.1016/j.microrel.2013.07.125⟩. ⟨emse-01100724⟩

Share

Metrics

Record views

135

Files downloads

440