Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement - Mines Saint-Étienne Access content directly
Conference Papers Year : 2012

Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement

Abstract

This study responds to our need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus it is mandatory to understand the behavior of elementary devices under laser stimulation, in order to model and anticipate the behavior of more complex circuits. This paper characterizes and analyses effects induced by a static photoelectric laser on a 90 nm technology PMOS transistor. Comparisons between currents induced in short or long channel transistors for both ON and OFF states are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices.
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Dates and versions

emse-01130626 , version 1 (12-03-2015)

Identifiers

  • HAL Id : emse-01130626 , version 1

Cite

R Llido, A Sarafianos, O Gagliano, V Serradeil, V Goubier, et al.. Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement. 38th International Symposium for Testing and Failure Analysis, ISTFA 2012, Nov 2012, Phoenix, United States. ⟨emse-01130626⟩
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