K. Haraguchi, Microscopic optical beam induced current measurements and their applications, Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9), pp.693-699, 1994.
DOI : 10.1109/IMTC.1994.352005

R. Llido, Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement, Proceedings of IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), p.2012
URL : https://hal.archives-ouvertes.fr/emse-00742705

A. Sarafianos, Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology, 2013 IEEE International Reliability Physics Symposium (IRPS), p.2012
DOI : 10.1109/IRPS.2013.6532028
URL : https://hal.archives-ouvertes.fr/emse-01130636

R. Minixhofer, TCAD as an integral part of the semiconductor manufacturing environment, 2006 International Conference on Simulation of Semiconductor Processes and Devices, pp.9-16, 2006.
DOI : 10.1109/SISPAD.2006.282827

T. Beauchêne, Etude et localisation de défaults dans les circuits intégrés par stimulation photoélectrique laser, 2004.

J. L. Wirth and S. C. Rogers, The Transient Response of Transistors and Diodes to Ionizing Radiation, IEEE Transactions on Nuclear Science, vol.11, issue.5, pp.24-38, 1964.
DOI : 10.1109/TNS2.1964.4315472

V. Pouget, SPICE modeling of the transient response of irradiated MOSFETs, IEEE Transactions on Nuclear Science, vol.47, issue.3, pp.508-513, 2000.
DOI : 10.1109/23.856472
URL : https://hal.archives-ouvertes.fr/hal-00184305

A. Douin, Influence of Laser Pulse Duration in Single Event Upset Testing, IEEE Transactions on Nuclear Science, vol.53, issue.4, pp.1799-1805, 2006.
DOI : 10.1109/TNS.2006.880939
URL : https://hal.archives-ouvertes.fr/hal-00397942

S. K. Brahma, Functional Analysis of MOSFETs and HEMTs with Laser Stimulation and Photonemission, 2008.

K. Nikawa and S. Inoue, New Laser Beam Neating Methods Applicable to Fault Localization and Defect Detection in VLSI Devices, Proceedings of International Reliability Physics Symposium RELPHY-96, pp.346-354, 1996.
DOI : 10.1109/RELPHY.1996.492141

F. Beaudoin, Reliability Defect Monitoring with Thermal Laser Stimulation: Biased Versus Unbiased, Microelectronics Reliability, vol.42, issue.9-11, pp.1729-1734, 2002.
DOI : 10.1016/S0026-2714(02)00221-4

R. Llido, Improving defect localization techniques with laser beam with specific analysis and set-up modules, 2012 IEEE International Reliability Physics Symposium (IRPS), p.2012
DOI : 10.1109/IRPS.2012.6241903
URL : https://hal.archives-ouvertes.fr/hal-00988382

R. Llido, Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory, Microelectronics Reliability, vol.51, issue.9-11, pp.1658-1661, 2011.
DOI : 10.1016/j.microrel.2011.06.050
URL : https://hal.archives-ouvertes.fr/hal-00669826

C. B. Kiyan and C. Boit, Timing Characterization of a Tester Operated Integrated Circuit by Continuous and Pulsed Laser Stimulation, Proc. of the 36th International Symposium for Testing and Failure Analysis (ISTFA), pp.211-216, 2010.

J. A. Rowlette and T. M. Eiles, Critical timing analysis in microprocessors using near-ir laser assisted device alteration (lada), International Test Conference, 2003. Proceedings. ITC 2003., pp.264-273, 2003.
DOI : 10.1109/TEST.2003.1270848

A. Sarafianos, Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology, Microelectronics Reliability, vol.52, issue.9-10, 2012.
DOI : 10.1016/j.microrel.2012.06.047
URL : https://hal.archives-ouvertes.fr/emse-01110360

P. Perdu, Identification of some key parameters for photoelectric laser stimulation of IC: an experimental approach, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.21-26, 2005.