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Improving defect localization techniques with laser beam with specific analysis and set-up modules, 2012 IEEE International Reliability Physics Symposium (IRPS) ,
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Characterization and TCAD Simulation of 90nm Technology PMOS Transistor Under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement, Proceedings of IEEE International Reliability Physics Symposium (ESREF), « in press ,
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Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology, Proceedings of IEEE International Reliability Physics Symposium (ESREF), « in press ,
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URL : https://hal.archives-ouvertes.fr/emse-01110360