Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation

Abstract : — This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an NMOS transistor in triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. This evaluation compares the triple-well structure to a classical Psubstrate-only structure of an NMOS transistor. It reveals the possible activation change of the bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.
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Communication dans un congrès
Reliability Physics Symposium (IRPS), 2015 IEEE International, Apr 2015, Monterey, United States. 〈10.1109/IRPS.2015.7112799〉
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https://hal-emse.ccsd.cnrs.fr/emse-01230163
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N Borrel, C Champeix, M Lisart, A Sarafianos, E Kussener, et al.. Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation. Reliability Physics Symposium (IRPS), 2015 IEEE International, Apr 2015, Monterey, United States. 〈10.1109/IRPS.2015.7112799〉. 〈emse-01230163〉

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