Skip to Main content Skip to Navigation
Journal articles

Experimental and numerical thermal analysis for direct microwave heating of silicon carbide

Abstract : A comparison between experiment and numerical simulation of microwave heating of a parallelepipedic silicon carbide (SiC) sample is presented. Using a-2.45GHz single-mode cavity, the evolution of the surface temperature is first experimen- tally studied for different orientations of the sample. A finite element analysis of this electromagnetic-thermal coupled problem is then conducted with the COMSOL Multiphysics ® software. Despite the different approximations of our model, a good agreement between experimental and numerical results is found, confirming that the heating of SiC depends only on the electric field. The effect of sample orientations and the cavity length on heating is also highlighted and analyzed.
Document type :
Journal articles
Complete list of metadata

https://hal-emse.ccsd.cnrs.fr/emse-03223272
Contributor : Géraldine Fournier-Moulin <>
Submitted on : Monday, May 10, 2021 - 5:48:22 PM
Last modification on : Wednesday, May 12, 2021 - 3:08:02 AM

Identifiers

Collections

Citation

Inès Ghorbel, Patrick Ganster, Nicolas Moulin, Christophe Meunier, Julien Bruchon. Experimental and numerical thermal analysis for direct microwave heating of silicon carbide. Journal of the American Ceramic Society, Wiley, 2021, 104 (1), pp.302-312. ⟨10.1111/jace.17451⟩. ⟨emse-03223272⟩

Share

Metrics

Record views

21