Characterization of tin dioxide film for chemical vapors sensor

Abstract : Recently, oxide semiconductor material used as transducer has been the central topic of many studies for gas sensor. In this paper we investigated the characteristic of a thick film of tin dioxide (SnO2) film for chemical vapor sensor. It has been prepared by screen-printing technology and deposited on alumina substrate provided with two gold electrodes. The morphology, the molecular composition and the electrical properties of this material have been characterized respectively by Atomic Force Spectroscopy (AFM), Fourier Transformed Infrared Spectroscopy (FTIR) and Impedance Spectroscopy (IS). The electrical properties showed a resistive behaviour of this material less than 300 °C which is the operating temperature of the sensor. The developed sensor can identify the nature of the detected gas, oxidizing or reducing.
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Article dans une revue
Materials Science and Engineering, Elsevier, 2008, 28 (5-6), pp.584-587. 〈10.1016/j.msec.2007.10.064〉
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https://hal-emse.ccsd.cnrs.fr/emse-00431664
Contributeur : Andrée-Aimée Toucas <>
Soumis le : jeudi 12 novembre 2009 - 17:12:59
Dernière modification le : lundi 30 avril 2018 - 12:22:02

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I. Hafaeidh, S. Helali, Kamel Cherif, Adnane Abdelghani, Guy Tournier. Characterization of tin dioxide film for chemical vapors sensor. Materials Science and Engineering, Elsevier, 2008, 28 (5-6), pp.584-587. 〈10.1016/j.msec.2007.10.064〉. 〈emse-00431664〉

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