Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors

Abstract : The response of PEDOT:PSS planar electrochemical transistors to H2O2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.
Type de document :
Article dans une revue
Advanced Materials, Wiley-VCH Verlag, 2010, 22 (9), pp.1012
Liste complète des métadonnées

https://hal-emse.ccsd.cnrs.fr/emse-00480625
Contributeur : George Malliaras <>
Soumis le : mardi 4 mai 2010 - 15:55:31
Dernière modification le : mercredi 29 novembre 2017 - 10:06:29

Identifiants

  • HAL Id : emse-00480625, version 1

Collections

Citation

Fabio Cicoira, Michele Sessolo, Oomid Yaghmazadeh, John Defranco, Sang Yang, et al.. Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors. Advanced Materials, Wiley-VCH Verlag, 2010, 22 (9), pp.1012. 〈emse-00480625〉

Partager

Métriques

Consultations de la notice

65