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Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors

Abstract : The response of PEDOT:PSS planar electrochemical transistors to H2O2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.
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https://hal-emse.ccsd.cnrs.fr/emse-00480625
Contributor : George Malliaras <>
Submitted on : Tuesday, May 4, 2010 - 3:55:31 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:52 PM

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  • HAL Id : emse-00480625, version 1

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Fabio Cicoira, Michele Sessolo, Oomid Yaghmazadeh, John Defranco, Sang Yang, et al.. Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors. Advanced Materials, Wiley-VCH Verlag, 2010, 22 (9), pp.1012. ⟨emse-00480625⟩

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