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Journal Articles Advanced Materials Year : 2010

Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors

Fabio Cicoira
  • Function : Author
Michele Sessolo
  • Function : Author
Oomid Yaghmazadeh
  • Function : Author
Sang Yang
  • Function : Author

Abstract

The response of PEDOT:PSS planar electrochemical transistors to H2O2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.
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Dates and versions

emse-00480625 , version 1 (04-05-2010)

Identifiers

  • HAL Id : emse-00480625 , version 1

Cite

Fabio Cicoira, Michele Sessolo, Oomid Yaghmazadeh, John A. Defranco, Sang Yang, et al.. Influence of Device Geometry on Sensor Characteristics of Planar Organic Electrochemical Transistors. Advanced Materials, 2010, 22 (9), pp.1012. ⟨emse-00480625⟩
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