Building the electricalmodel of the PhotoelectricLaserStimulation of a PMOS transistor in 90 nm technology

Abstract : This paper presents the electricalmodel of aPMOStransistor in 90 nm technology under 1064 nm PhotoelectricLaserStimulation. The model was built and tuned from measurements made on test structures. It permits to simulate the effect of a continuous wave laser on aPMOStransistor by taking into account the laser's parameters (i.e. spot size and location, or power) and the PMOS' geometry and bias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS.
Type de document :
Article dans une revue
Microelectronics Reliability, Elsevier, 2012, 52, pp.2035-2038
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https://hal-emse.ccsd.cnrs.fr/emse-00742622
Contributeur : Hélène Le Bouder <>
Soumis le : mardi 16 octobre 2012 - 16:55:27
Dernière modification le : jeudi 11 janvier 2018 - 06:21:07

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  • HAL Id : emse-00742622, version 1

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Sarafianos Alexandre, R. Llido, Jean-Max Dutertre, Olivier Gagliano, Valérie Serradeil, et al.. Building the electricalmodel of the PhotoelectricLaserStimulation of a PMOS transistor in 90 nm technology. Microelectronics Reliability, Elsevier, 2012, 52, pp.2035-2038. 〈emse-00742622〉

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