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Journal Articles Microelectronics Reliability Year : 2012

Building the electricalmodel of the PhotoelectricLaserStimulation of a PMOS transistor in 90 nm technology

Abstract

This paper presents the electricalmodel of aPMOStransistor in 90 nm technology under 1064 nm PhotoelectricLaserStimulation. The model was built and tuned from measurements made on test structures. It permits to simulate the effect of a continuous wave laser on aPMOStransistor by taking into account the laser's parameters (i.e. spot size and location, or power) and the PMOS' geometry and bias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS.
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Dates and versions

emse-00742622 , version 1 (16-10-2012)

Identifiers

  • HAL Id : emse-00742622 , version 1

Cite

Sarafianos Alexandre, R. Llido, Jean-Max Dutertre, Olivier Gagliano, Valérie Serradeil, et al.. Building the electricalmodel of the PhotoelectricLaserStimulation of a PMOS transistor in 90 nm technology. Microelectronics Reliability, 2012, 52, pp.2035-2038. ⟨emse-00742622⟩
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