Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement

Abstract : This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses photoelectric effects induced by static 1064 nm wavelength laser on a 90 nm technology NMOS transistor. Comparisons between photocurrents in short or long channel transistor, or in function of its state (on or off) are presented. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses, which gives a physical insight of carriers generation and transport in the devices.
Type de document :
Communication dans un congrès
19th IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, Jul 2012, Singapore, Singapore. pp.1-6, 2012
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https://hal-emse.ccsd.cnrs.fr/emse-00742705
Contributeur : Hélène Le Bouder <>
Soumis le : mercredi 17 octobre 2012 - 08:42:50
Dernière modification le : jeudi 11 janvier 2018 - 06:21:07

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  • HAL Id : emse-00742705, version 1

Citation

Alexandre Sarafianos, R. Llido, Olivier Gagliano, Valérie Serradeil, V. Goubier, et al.. Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement. 19th IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, Jul 2012, Singapore, Singapore. pp.1-6, 2012. 〈emse-00742705〉

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