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Conference papers
Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement
Alexandre Sarafianos
1, 2
R. Llido
2
Olivier Gagliano
2
Valérie Serradeil
2
V. Goubier
2
M. Lisart
2
G. Haller
2
V. Pouget
3
D. Lewis
3
Jean-Max Dutertre
1
Assia Tria
1, 4
Alexandre Sarafianos 1, 2
Author
R. Llido 2
Author
Olivier Gagliano 2
Author
Valérie Serradeil 2
Author
V. Goubier 2
Author
M. Lisart 2
Author
G. Haller 2
Author
V. Pouget 3
Author IdHAL : vincent-pouget ORCID : https://orcid.org/0000-0001-6126-6708
D. Lewis 3
Author
Jean-Max Dutertre 1
Author IdHAL : jean-max-dutertre ORCID : https://orcid.org/0000-0002-2251-7815
Assia Tria 1, 4
Author
1
SAS-ENSMSE - Département Systèmes et Architectures Sécurisés (880, route de Mimet 13541 GARDANNE - FRANCE - France)
- Mines Saint-Étienne MSE - École des Mines de Saint-Étienne (158, Cours Fauriel - 42023 Saint Étienne cedex 2 - France)
- IMT - Institut Mines-Télécom [Paris] (37-39 Rue Dareau, 75014 Paris - France)
- CMP-GC (France)
2
ST-ROUSSET - STMicroelectronics [Rousset] (ZI de Peynier Rousset, avenue Celestin Coq - 13790 Rousset - France)
3
IMS - Laboratoire de l'intégration, du matériau au système (33405 TALENCE CEDEX - France)
- Université Sciences et Technologies - Bordeaux 1 (351 cours de la Libération - 33405 Talence cedex - France)
- Institut Polytechnique de Bordeaux (146, rue Léo Saignat, 33076 Bordeaux - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5218 (France)
4
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
Abstract : This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses photoelectric effects induced by static 1064 nm wavelength laser on a 90 nm technology NMOS transistor. Comparisons between photocurrents in short or long channel transistor, or in function of its state (on or off) are presented. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses, which gives a physical insight of carriers generation and transport in the devices.
Document type :
Conference papers
Complete list of metadatas
https://hal-emse.ccsd.cnrs.fr/emse-00742705
Contributor : Hélène Le Bouder <>
Submitted on : Wednesday, October 17, 2012 - 8:42:50 AM
Last modification on : Wednesday, June 24, 2020 - 4:18:19 PM
Contributor : Hélène Le Bouder <>
Submitted on : Wednesday, October 17, 2012 - 8:42:50 AM
Last modification on : Wednesday, June 24, 2020 - 4:18:19 PM
Identifiers
- HAL Id : emse-00742705, version 1
Collections
CEA | CNRS | IMS-BORDEAUX | SAS-ENSMSE | CMP-ENSMSE | EMSE | IMS-BORDEAUX-FUSION | DRT | LETI | CEA-GRE | INSTITUT-TELECOM
Citation
Alexandre Sarafianos, R. Llido, Olivier Gagliano, Valérie Serradeil, V. Goubier, et al.. Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement. 19th IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, Jul 2012, Singapore, Singapore. pp.1-6. ⟨emse-00742705⟩
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