Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement - Mines Saint-Étienne Access content directly
Conference Papers Year : 2012

Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement

Abstract

This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses photoelectric effects induced by static 1064 nm wavelength laser on a 90 nm technology NMOS transistor. Comparisons between photocurrents in short or long channel transistor, or in function of its state (on or off) are presented. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses, which gives a physical insight of carriers generation and transport in the devices.
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Dates and versions

emse-00742705 , version 1 (17-10-2012)

Identifiers

  • HAL Id : emse-00742705 , version 1

Cite

Alexandre Sarafianos, R. Llido, Olivier Gagliano, Valérie Serradeil, V. Goubier, et al.. Characterization and TCAD simulation of 90 nm technology transistors under continuous photoelectric laser stimulation for failure analysis improvement. 19th IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS, Jul 2012, Singapore, Singapore. pp.1-6. ⟨emse-00742705⟩
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