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Conference Papers Year : 2013

Robustness improvement of an SRAM cell against laser-induced fault injection

Abstract

This paper presents the design of an SRAM cell with a robustness improvement against laser-induced fault injection. We report the fault sensitivity mapping of a first SRAM design. A careful analysis of its results combined with the use of an electrical model at transistor level of the photoelectric effect induced by a laser permit us to validate our approach. The robustness improvement is due to a specific layout which takes into account the topology of the cell and to the effect of a triple well implant on the laser sensitivity of NMOS transistors.
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Dates and versions

emse-01109141 , version 1 (24-01-2015)

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Alexandre Sarafianos, Mathieu Lisart, Olivier Gagliano, Valérie Serradeil, Cyril Roscian, et al.. Robustness improvement of an SRAM cell against laser-induced fault injection. Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on, Oct 2013, New York, United States. ⟨10.1109/DFT.2013.6653598⟩. ⟨emse-01109141⟩
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