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Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Jean-Max Dutertre 1 Cyril Roscian 1 Alexandre Sarafianos 2 Marc Lacruche 1
1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés
2 ST-TOURS - STMicroelectronics [Tours]
Abstract : I. Introduction Laser fault injection – mechanism SRAM fault injection sensitivity II. Fault model Description & Assumptions III. Experimental results Standalone SRAM / μCTRL RAM IV. Model-based simulation of laser-induced faults V. Conclusion and perspectives
Keywords : SRAM hardware security SEU simulation laser fault injection
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Conference papers
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https://hal-emse.ccsd.cnrs.fr/emse-01110358
Contributor : Jean-Max Dutertre <>
Submitted on : Wednesday, January 28, 2015 - 1:27:32 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:22 PM

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  • HAL Id : emse-01110358, version 1

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EMSE | INSTITUT-TELECOM | SAS-ENSMSE

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Jean-Max Dutertre, Cyril Roscian, Alexandre Sarafianos, Marc Lacruche. Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis. TRUDEVICE - WG Meetings, 2013, Dec 2013, Freiburg, Germany. ⟨emse-01110358⟩

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