Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Jean-Max Dutertre; Cyril Roscian; Alexandre Sarafianos; Marc Lacruche

Conference papers

Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Jean-Max Dutertre ¹ Cyril Roscian ¹ Alexandre Sarafianos ² Marc Lacruche ¹

1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés

Abstract : I. Introduction Laser fault injection – mechanism SRAM fault injection sensitivity II. Fault model Description & Assumptions III. Experimental results Standalone SRAM / μCTRL RAM IV. Model-based simulation of laser-induced faults V. Conclusion and perspectives

Keywords : laser fault injection SEU simulation SRAM hardware security

Document type :

Conference papers

Domain :

Engineering Sciences [physics]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Complete list of metadata

https://hal-emse.ccsd.cnrs.fr/emse-01110358
Contributor : Jean-Max Dutertre Connect in order to contact the contributor
Submitted on : Wednesday, January 28, 2015 - 1:27:32 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:22 PM

Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Annex

Identifiers

Collections

Citation

Export

Metrics

92

105

Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Annex

Identifiers

Collections

Citation

Export

Share

Metrics

92

105