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Conference Papers Year : 2013

Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Abstract

I. Introduction Laser fault injection – mechanism SRAM fault injection sensitivity II. Fault model Description & Assumptions III. Experimental results Standalone SRAM / μCTRL RAM IV. Model-based simulation of laser-induced faults V. Conclusion and perspectives
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Dates and versions

emse-01110358 , version 1 (28-01-2015)

Identifiers

  • HAL Id : emse-01110358 , version 1

Cite

Jean-Max Dutertre, Cyril Roscian, Alexandre Sarafianos, Marc Lacruche. Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis. TRUDEVICE - WG Meetings, 2013, Dec 2013, Freiburg, Germany. ⟨emse-01110358⟩
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