Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Jean-Max Dutertre; Cyril Roscian; Alexandre Sarafianos; Marc Lacruche

Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

Jean-Max Dutertre ¹ Cyril Roscian ¹ Alexandre Sarafianos ² Marc Lacruche ¹

1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés

Abstract : I. Introduction Laser fault injection – mechanism SRAM fault injection sensitivity II. Fault model Description & Assumptions III. Experimental results Standalone SRAM / μCTRL RAM IV. Model-based simulation of laser-induced faults V. Conclusion and perspectives

Keywords : SRAM hardware security SEU simulation laser fault injection

Type de document :

Communication dans un congrès

TRUDEVICE - WG Meetings, 2013, Dec 2013, Freiburg, Germany

Domaine :

Sciences de l'ingénieur [physics]

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-emse.ccsd.cnrs.fr/emse-01110358
Contributeur : Jean-Max Dutertre <>
Soumis le : mercredi 28 janvier 2015 - 13:27:32
Dernière modification le : lundi 2 février 2015 - 11:50:29

Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

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Laser-Induced Faults in SRAM Memory Cells: Experimental Results and Simulation-based Analysis

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