Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology
Abstract
This paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate theeffectofacontinuous wave laser on a PMOS transistor by taking into account the laser's parameters (i.e. spot size and location, orpower)andthePMOS'geometryandbias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS.
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HAL_MR2012_Building_the_electrical_model_of_the_Photoelectric_Laser_Stimulation_of_a_PMOS_transistor_in_90_nm_technology.pdf (345.58 Ko)
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