Improving an SEU Hard Design using a Pulsed Laser

Jean-Max Dutertre; Fernand-Michel Roche; Patrice Fouillat; Dean Lewis

doi:10.1109/RADECS.2001.1159287

Improving an SEU Hard Design using a Pulsed Laser

Jean-Max Dutertre ¹ Fernand-Michel Roche ² Patrice Fouillat ³ Dean Lewis ³

1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés

2 LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier

3 IMS Laboratory- Bordeaux University

IMS - Laboratoire de l'intégration, du matériau au système

Abstract : The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more detailed analysis of the phenomenon leading to the upset and a precise localization of the most sensitive areas. As a result the behavior verification of the design combined with the use of robust elementary blocks strengthens the hardening capabilities of the cell.

Keywords : Single event effect Single event upset Single event transient Radiation hardening

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-emse.ccsd.cnrs.fr/emse-01130950
Contributor : Jean-Max Dutertre <>
Submitted on : Thursday, March 12, 2015 - 3:48:55 PM
Last modification on : Thursday, February 7, 2019 - 2:48:57 PM
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