Improving an SEU Hard Design using a Pulsed Laser

Jean-Max Dutertre 1 Fernand-Michel Roche 2 Patrice Fouillat 3 Dean Lewis 3
1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés
2 LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
3 IMS Laboratory- Bordeaux University
IMS - Laboratoire de l'intégration, du matériau au système
Abstract : The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more detailed analysis of the phenomenon leading to the upset and a precise localization of the most sensitive areas. As a result the behavior verification of the design combined with the use of robust elementary blocks strengthens the hardening capabilities of the cell.
Keywords : Single event effect Single event upset Single event transient Radiation hardening
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Conference papers
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EMSE | INSTITUT-TELECOM | CNRS | IMS-BORDEAUX | IMS-BORDEAUX-FUSION | SAS-ENSMSE | LIRMM | MIPS | UNIV-MONTPELLIER

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Jean-Max Dutertre, Fernand-Michel Roche, Patrice Fouillat, Dean Lewis. Improving an SEU Hard Design using a Pulsed Laser. Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on, Sep 2001, Grenoble, France. ⟨10.1109/RADECS.2001.1159287⟩. ⟨emse-01130950⟩

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