Improving an SEU Hard Design using a Pulsed Laser

Abstract : The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more detailed analysis of the phenomenon leading to the upset and a precise localization of the most sensitive areas. As a result the behavior verification of the design combined with the use of robust elementary blocks strengthens the hardening capabilities of the cell.
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Communication dans un congrès
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on, Sep 2001, Grenoble, France. 〈10.1109/RADECS.2001.1159287〉
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Jean-Max Dutertre, Fernand-Michel Roche, Patrice Fouillat, Dean Lewis. Improving an SEU Hard Design using a Pulsed Laser. Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on, Sep 2001, Grenoble, France. 〈10.1109/RADECS.2001.1159287〉. 〈emse-01130950〉

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