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Improving an SEU Hard Design using a Pulsed Laser
Abstract : The purpose of this work is to present one investigation utilizing a pulsed laser as a tool to improve the Single Event Upset tolerance of a memory cell. These results coming with a previous ion testing evaluation of the circuit allow an optimization of the design. The laser results permit a more detailed analysis of the phenomenon leading to the upset and a precise localization of the most sensitive areas. As a result the behavior verification of the design combined with the use of robust elementary blocks strengthens the hardening capabilities of the cell.
Cited literature [16 references]
https://hal-emse.ccsd.cnrs.fr/emse-01130950
Contributor : Jean-Max Dutertre <>
Submitted on : Thursday, March 12, 2015 - 3:48:55 PM
Last modification on : Wednesday, December 18, 2019 - 4:57:34 PM
Document(s) archivé(s) le : Monday, April 17, 2017 - 11:09:45 AM
Contributor : Jean-Max Dutertre <>
Submitted on : Thursday, March 12, 2015 - 3:48:55 PM
Last modification on : Wednesday, December 18, 2019 - 4:57:34 PM
Document(s) archivé(s) le : Monday, April 17, 2017 - 11:09:45 AM
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