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Journal articles
Electrical model of an Inverter body biased structure in triple well technology under pulsed photoelectric laser stimulation
Abstract : This study is driven by the need to optimize reliability and failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. Nowadays, single event effect (SEE) evaluations due to radiation impacts are critical in fault tolerance and security field. The prediction of a SEE occurring on electronic devices is proposed by the determination and modeling of the phenomena under pulsed laser stimulation. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an inverter in a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals the possible activation change of the parasitic bipolar transistors. Based on these experimental mea- surements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation. Therefore this electrical model could be used as a tool for characterizing more complex CMOS circuits under photoelectrical laser stimulation.
Cited literature [15 references]
https://hal-emse.ccsd.cnrs.fr/emse-01227386
Contributor : Jean-Max Dutertre <>
Submitted on : Wednesday, August 8, 2018 - 3:32:21 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:24 PM
Contributor : Jean-Max Dutertre <>
Submitted on : Wednesday, August 8, 2018 - 3:32:21 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:24 PM
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