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Conference Papers Year : 2013

Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology

Abstract

This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements.
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Dates and versions

emse-01109124 , version 1 (24-01-2015)

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Alexandre Sarafianos, Olivier Gagliano, Valérie Serradeil, Mathieu Lisart, Jean-Max Dutertre, et al.. Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology. International Reliability Physics Symposium (IRPS), Apr 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6532028⟩. ⟨emse-01109124⟩
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