Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology - Mines Saint-Étienne
Conference Papers Year : 2013

Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology

Abstract

This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements.

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Micro and nanotechnologies/Microelectronics
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Jean-Max Dutertre  : Connect in order to contact the contributor

https://hal-emse.ccsd.cnrs.fr/emse-01109124

Submitted on : Saturday, January 24, 2015-5:22:53 PM

Last modification on : Tuesday, September 17, 2024-3:46:02 PM

Long-term archiving on : Saturday, April 25, 2015-10:10:31 AM

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Dates and versions

emse-01109124 , version 1 (24-01-2015)

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Alexandre Sarafianos, Olivier Gagliano, Valérie Serradeil, Mathieu Lisart, Jean-Max Dutertre, et al.. Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology. International Reliability Physics Symposium (IRPS), Apr 2013, Monterey, United States. ⟨10.1109/IRPS.2013.6532028⟩. ⟨emse-01109124⟩

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