Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology - Mines Saint-Étienne Access content directly
Journal Articles Microelectronics Reliability Year : 2012

Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology

Abstract

This paper presents the electrical model of a PMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures. It permits to simulate theeffectofacontinuous wave laser on a PMOS transistor by taking into account the laser's parameters (i.e. spot size and location, orpower)andthePMOS'geometryandbias. It offers a significant gain of time by comparison with experiments and makes possible to build 3D photocurrent cartographies generated by the laser on the PMOS.
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Dates and versions

emse-01110360 , version 1 (28-01-2015)

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A Sarafianos, R Llido, O Gagliano, V Serradeil, M Lisart, et al.. Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90nm technology. Microelectronics Reliability, 2012, pp.2035-2038. ⟨10.1016/j.microrel.2012.06.047⟩. ⟨emse-01110360⟩
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