Laser Fault Injection into SRAM cells: Picosecond versus Nanosecond pulses

Abstract : —Laser fault injection into SRAM cells is a widely used technique to perform fault attacks. In previous works, Roscian and Sarafianos studied the relations between the layout of the cell, its different laser-sensitive areas and their associated fault model using 50 ns duration laser pulses. In this paper, we report similar experiments carried out using shorter laser pulses (30 ps duration instead of 50 ns). Laser-sensitive areas that did not appear at 50 ns were observed. Additionally, these experiments confirmed the validity of the bit-set/bit-reset fault model over the bit-flip one. We also propose an upgrade of the simulation model they used to take into account laser pulses in the picosecond range. Finally, we performed additional laser fault injection experiments on the RAM memory of a microcontroller to validate the previous results.
Type de document :
Communication dans un congrès
On-Line Testing Symposium (IOLTS), 2015 IEEE 21st International, Jul 2015, Halkidiki, France. 〈10.1109/IOLTS.2015.7229820〉
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https://hal-emse.ccsd.cnrs.fr/emse-01227286
Contributeur : Jean-Max Dutertre <>
Soumis le : lundi 16 novembre 2015 - 13:26:22
Dernière modification le : jeudi 15 mars 2018 - 16:56:06
Document(s) archivé(s) le : vendredi 28 avril 2017 - 04:52:33

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Marc Lacruche, Nicolas Borrel, Clément Champeix, C. Roscian, A. Sarafianos, et al.. Laser Fault Injection into SRAM cells: Picosecond versus Nanosecond pulses. On-Line Testing Symposium (IOLTS), 2015 IEEE 21st International, Jul 2015, Halkidiki, France. 〈10.1109/IOLTS.2015.7229820〉. 〈emse-01227286〉

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