Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Abstract : Bulk Built-In Current Sensors (bbicss) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one bbics architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor nmos transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cmos to offset it. Further, we introduce a new bbics architecture well suited for triple-well that offers high detection sensitivity and low area overhead.
Type de document :
Article dans une revue
Microelectronics Reliability, Elsevier, 2014, 54 (9-10), pp.2289-2294. 〈10.1016/j.microrel.2014.07.151〉
Liste complète des métadonnées

Littérature citée [7 références]  Voir  Masquer  Télécharger

https://hal-emse.ccsd.cnrs.fr/emse-01094805
Contributeur : Jean-Max Dutertre <>
Soumis le : samedi 13 décembre 2014 - 12:11:06
Dernière modification le : jeudi 9 août 2018 - 12:04:02
Document(s) archivé(s) le : samedi 14 mars 2015 - 10:20:11

Fichier

HAL_MR2014_BBICS.pdf
Fichiers produits par l'(les) auteur(s)

Identifiants

Citation

Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, et al.. Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS. Microelectronics Reliability, Elsevier, 2014, 54 (9-10), pp.2289-2294. 〈10.1016/j.microrel.2014.07.151〉. 〈emse-01094805〉

Partager

Métriques

Consultations de la notice

635

Téléchargements de fichiers

350