Discussion on the Model of Laser Induced Faults in SRAM Memory cells - Mines Saint-Étienne
Conference Papers Year : 2013

Discussion on the Model of Laser Induced Faults in SRAM Memory cells

Abstract

Discussion on the Model of Laser Induced Faults in SRAM Memory cells

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics
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Jean-Max Dutertre  : Connect in order to contact the contributor

https://hal-emse.ccsd.cnrs.fr/emse-01109302

Submitted on : Wednesday, January 28, 2015-1:26:33 PM

Last modification on : Tuesday, September 24, 2024-10:18:14 AM

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emse-01109302 , version 1 (28-01-2015)

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  • HAL Id : emse-01109302 , version 1

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Cyril Roscian, Alexandre Sarafianos, Jean-Max Dutertre, Assia Tria, Mathieu Lisart. Discussion on the Model of Laser Induced Faults in SRAM Memory cells. Forth International Workshop on Constructive Side-Channel Analysis and Secure Design, COSADE 2013, Mar 2013, Paris, France. ⟨emse-01109302⟩

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