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Conference papers

Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits

Stephan de Castro 1, 2 Jean-Max Dutertre 1 Giorgio Di Natale 2 Marie-Lise Flottes 2 Bruno Rouzeyre 2
2 TEST - TEST
LIRMM - Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier
Abstract : Among all means to attack a security dedicated circuit, fault injection by means of laser illumination is a very efficient one. The laser beam creates electrons/holes pairs along its way through the silicon. The collection of these charges creates a transient current and thus may induce a fault in the circuit. Nevertheless the collection efficiency depends on various parameters including the technology used to implement the circuit. Here, up-to-date Bulk and Fully Depleted Silicon on Insulator (FD-SOI) 28nm technologies are compared in terms of sensitivity against laser injection. It comes out that FD-SOI structures show less sensitivity to laser injection and thus should be further explored for security dedicated circuits implementations.
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https://hal-emse.ccsd.cnrs.fr/emse-01227138
Contributor : Jean-Max Dutertre Connect in order to contact the contributor
Submitted on : Monday, November 16, 2015 - 1:28:55 PM
Last modification on : Thursday, March 31, 2022 - 11:02:32 AM
Long-term archiving on: : Friday, April 28, 2017 - 8:05:44 AM

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Stephan de Castro, Jean-Max Dutertre, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits. ISVLSI: International Symposium on Very Large Scale Integration, Jul 2015, Montpellier, France. pp.362-367, ⟨10.1109/ISVLSI.2015.76⟩. ⟨emse-01227138⟩

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