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Conference papers
Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits
Abstract : Among all means to attack a security dedicated circuit, fault injection by means of laser illumination is a very efficient one. The laser beam creates electrons/holes pairs along its way through the silicon. The collection of these charges creates a transient current and thus may induce a fault in the circuit. Nevertheless the collection efficiency depends on various parameters including the technology used to implement the circuit. Here, up-to-date Bulk and Fully Depleted Silicon on Insulator (FD-SOI) 28nm technologies are compared in terms of sensitivity against laser injection. It comes out that FD-SOI structures show less sensitivity to laser injection and thus should be further explored for security dedicated circuits implementations.
https://hal-emse.ccsd.cnrs.fr/emse-01227138
Contributor : Jean-Max Dutertre <>
Submitted on : Monday, November 16, 2015 - 1:28:55 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:22 PM
Document(s) archivé(s) le : Friday, April 28, 2017 - 8:05:44 AM
Contributor : Jean-Max Dutertre <>
Submitted on : Monday, November 16, 2015 - 1:28:55 PM
Last modification on : Wednesday, June 24, 2020 - 4:18:22 PM
Document(s) archivé(s) le : Friday, April 28, 2017 - 8:05:44 AM
