Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits

Abstract : Among all means to attack a security dedicated circuit, fault injection by means of laser illumination is a very efficient one. The laser beam creates electrons/holes pairs along its way through the silicon. The collection of these charges creates a transient current and thus may induce a fault in the circuit. Nevertheless the collection efficiency depends on various parameters including the technology used to implement the circuit. Here, up-to-date Bulk and Fully Depleted Silicon on Insulator (FD-SOI) 28nm technologies are compared in terms of sensitivity against laser injection. It comes out that FD-SOI structures show less sensitivity to laser injection and thus should be further explored for security dedicated circuits implementations.
Type de document :
Communication dans un congrès
ISVLSI: IEEE Computer Society Annual Symposium on VLSI, Jul 2015, Montpellier, France. 2015, Proceedings of the 2015 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). 〈10.1109/ISVLSI.2015.76〉
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https://hal-emse.ccsd.cnrs.fr/emse-01227138
Contributeur : Jean-Max Dutertre <>
Soumis le : lundi 16 novembre 2015 - 13:28:55
Dernière modification le : mardi 23 octobre 2018 - 14:36:05
Document(s) archivé(s) le : vendredi 28 avril 2017 - 08:05:44

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Stephan De Castro, Jean-Max Dutertre, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits. ISVLSI: IEEE Computer Society Annual Symposium on VLSI, Jul 2015, Montpellier, France. 2015, Proceedings of the 2015 IEEE Computer Society Annual Symposium on VLSI (ISVLSI). 〈10.1109/ISVLSI.2015.76〉. 〈emse-01227138〉

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