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Conference Papers Year : 2015

Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits

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Abstract

Among all means to attack a security dedicated circuit, fault injection by means of laser illumination is a very efficient one. The laser beam creates electrons/holes pairs along its way through the silicon. The collection of these charges creates a transient current and thus may induce a fault in the circuit. Nevertheless the collection efficiency depends on various parameters including the technology used to implement the circuit. Here, up-to-date Bulk and Fully Depleted Silicon on Insulator (FD-SOI) 28nm technologies are compared in terms of sensitivity against laser injection. It comes out that FD-SOI structures show less sensitivity to laser injection and thus should be further explored for security dedicated circuits implementations.
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Origin : Files produced by the author(s)
Origin : Files produced by the author(s)

Dates and versions

emse-01227138 , version 1 (16-11-2015)

Identifiers

Cite

Stephan de Castro, Jean-Max Dutertre, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. Figure of merits of 28nm Si technologies for implementing laser attack resistant security dedicated circuits. ISVLSI: International Symposium on Very Large Scale Integration, Jul 2015, Montpellier, France. pp.362-367, ⟨10.1109/ISVLSI.2015.76⟩. ⟨emse-01227138⟩
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